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| Semiconductor SDB310D Schottky Barrier Diode Features * Low power rectified * Silicon epitaxial type * High reliability Ordering Information Type No. SDB310D Marking B1 Package Code SOD-323 Outline Dimensions unit : mm 0.3~0.35 2.50.1 1.70.1 1.250.1 2 1 CATHODE MARK 0.150.04 2 1 0.90.1 0~0.1 0.2 Min. PIN Connections 1. Anode 2. Cathode KSD-C002-000 1 SDB310D Absolute maximum ratings Characteristic Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature Ta=25C Symbol VR IFRM* IF IFSM PD Tj Tstg Ratings 30 0.5 0.2 2 150 150 -55 ~ 150 Unit V A A A mW C C * : = D/T =0.33 (T<1S) * : Unit ratings. Total rating=Unit ratingx1.5 Electrical Characteristics Characteristic Forward voltage 1 Forward voltage 2 Reverse current Total capacitance Reverse recovery time Ta=25C Symbol VF(1) VF(2) IR CT trr IF=30mA VR=30V Test Condition IF=10mA Min. Typ. Max. 0.4 0.5 1 10 5 Unit V V A pF ns VR=1V, f=1MHz IF= IR=10mA, IRR= 1mA, RL=100 KSD-C002-000 2 SDB310D Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR -VR Fig. 3 CT-VR KSD-C002-000 3 |
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